Strained Silicon
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Strained silicon - Wikipedia, the free encyclopedia
... 70% faster allowing strained silicon transistors to switch ... A brief description of strained silicon technology from National Compound Semiconductor Roadmap ...
en.wikipedia.org

AmberWave Systems
... Announce Settlement of Strained Silicon Patent Infringement Litigation and License Agreement. ... R. LOW POWER. Y. HIGH YIELDS. Strained Silicon Technology ...
www.strainedsilicon.com

AMD and Strained Silicon, Page One
Since then Intel has utilized strained silicon for their latest Pentium 4 processors. ... But what exactly does strained silicon bring to the table, and why hasn't it ...
www.penstarsys.com

IBM's Strained Silicon Breakthrough Image Page
Animation of Strained Silicon ... In the strained silicon, electrons experience ... On the right is an image of electrons flowing through "strained silicon" ...
www.research.ibm.com

: : AMBERWAVE : : Strained Silicon
AmberWave's first development was strained silicon, which increases the speed ... For more details on Strained Silicon click here. ...
www.amberwave.com

Strained Silicon: Technologies, Opportunies
An up-to-date analysis of recent developments and current trends in the global strained silicon arena. The identification of significant revenue growth drivers in ...
www.bccresearch.com

strained_silicon
... pioneered by IBM and is called strained silicon germanium on SOI (SGOI) ... An overview on strained silicon by H. Valencia and F. Hockett from Portland Sate ...
www.clarycon.com

MEMC Electronic Materials, Inc. -- Silicon Wafer Manufacturing
Silicon wafers are the building block of the semiconductors found in ... Strained silicon starting wafers can be made by growing a sequence of epitaxial ...
www.memc.com

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Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This is accomplished by putting the layer of silicon over a Wafer (electronics) of silicon germanium (). As the atoms in the silicon layer align with the atoms in the silicon germanium layer where the atoms are farther apart, the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster. More recent advances include deposition of strained silicon using metalorganic vapor phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sources (silane and dichlorosilane) and germanium sources (germane, germanium tetrachloride, and isobutylgermane).

External links

• A brief description of strained silicon technology from National Compound Semiconductor Roadmap
• A corporate website's short description of this technology
• descriptive images from IBM
• High-Performance Flexible Silicon - A new way to make bendable high-speed strained silicon.
• Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Presentation at ACCGE-16, Montana, USA, July 11, 2005; Shenai-Khatkhate et al, Journal of Crystal Growth, January 25, 2006.
• Ge Precursors for Strained Si and Compound Semiconductors; Semiconductor International; April 1, 2006.
• Rohm and Haas Electronic Materials Devises Germanium Film Growth Process; CompoundSemi News, September 23, 2005.
• High Purity Germanium Film; III-Vs Review, September 23, 2005.
• Development of New Germanium Precursors for SiGe Epitaxy; Presentation at 210th ECS Meeting (SiGe Symposium), Cancun, Mexico, October 29, 2006.
• Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE; Deo V. Shenai, Ronald L. DiCarlo, Michael B. Power, Artashes Amamchyan, Randall J. Goyette and Egbert Woelk; Journal of Crystal Growth, Volume 298, Pages 172-175, January 7, 2007.